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  e l ek tr on isch e b a u e lemen te SGM3055 15a, 3 0v ,r ds(on) 100m n-channel enhancement mode power mos.fet [ description commercial industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the sot-89 package is universally preferred for all total power dissipation operating junction and storage temperature range thermal resistance junction-ambient max. a v v a a i d @t a =1 0 /w c c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a 3 0 20 50 15 9 15 -55~+150 42 drain-source voltage g ate-source voltage continuous drain current, v gs @10v continuous drain current, v gs @10v pulsed drain current par am et er sy m b o l rat i n g s un i t par am et er sy m b o l rat i n g s un i t 1 o o c o 0 c o c o absolute maximum ratings thermal data thermal resistance junction-case max. rthj-c 3 d g s http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 1 of 6 sot-89 ref. min. max. ref. min. max. a 4.4 4.6 g 3.00 ref. b 4.05 4.25 h 1.50 ref. c 1.50 1.70 i 0.40 0.52 d 1.30 1.50 j 1.40 1.60 e 2.40 2.60 k 0.35 0.41 f 0.89 1.20 l 5 typ. m 0.70 ref. millimeter millimeter rohs compliant product
e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e r d s ( o n ) p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a t e t h r es h o l d vo l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - so u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 1 5 0 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s b v d s / t j v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f 3 0 0 . 0 3 7 1 . 0 1 0 0 2 5 2 5 0 8 0 1 0 0 5 . 4 1 . 3 3 . 6 3 . 6 1 9 . 8 1 3 3 . 2 2 6 0 1 4 4 1 3  v v / v n a u a u a m n c n s p f [ v g s = 0 v v d s = 2 5 v f = 1 . 0 m h z v d s = 1 5 v i d = 8 a v g s = 1 0 v r g = 3 . 4 r d = 1 . 9 [ [ i d = 8 a v d s = 2 4 v v g s = 5 v v g s = 1 0 v , i d = 8 a v g s = 4 . 5 v , i d = 6 a v g s = 0 v , i d = 2 5 0 u a v g s = 2 0 v v d s = 3 0 v , v g s = 0 v d s = 2 4 v , v g s = 0 v d s = v g s , i d = 2 5 0 u a r e f e r e n c e t o 2 5 , i d = 1 m a _ _ _ s o u r c e - d r a i n d i o d e _ _ _ _ _ _ p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e c o n t i n u o u s s o u r c e c u r r e n t ( b o d y d i o d e ) v s d i s _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ i s = 1 5 a , v g s = 0 v , t j = 2 5 v d = v g = 0 v , v s = 1 . 3 v v a 1 . 3 1 5 n o t e s : 1 . p u l s e w i d t h l i m i t e d b y s a f e o p e r a t i n g a r e a . 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . ?? ?? _ _ _ p u l s e d s o u r c e c u r r e n t ( b o d y d i o d e ) i s m 5 0 a _ 3 . 0 _ _ _ _ _ 2 1 2 2 o c o c o c o c o o c h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l 01-jun-2002 rev. a page 2 of 6 e l ek tr on isch e b a u e lemen te sgm 3055 15 a, 3 0v ,r ds(on) 100 m n-channel enhancement mode power mos.fet [
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 3 of 6 c h a r a c t e r i s t i c s c u r v e e l ek tr on isch e b a u e lemen te sgm 3055 15 a, 3 0v ,r ds(on) 100 m n-channel enhancement mode power mos.fet [
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 4 of 6 e l ek tr on isch e b a u e lemen te sgm 3055 15 a, 3 0v ,r ds(on) 100 m n-channel enhancement mode power mos.fet [
any changing of specification will not be informed individual h t t p : / / w w w . s e c o s g m b h . c o m 0 1 - j u n - 2 0 0 2 r e v . a p a g e 5 of 6 e l ek tr on isch e b a u e lemen te sgm 3055 15 a, 3 0v ,r ds(on) 100 m n-channel enhancement mode power mos.fet [
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 6 of 6 e l ek tr on isch e b a u e lemen te sgm 3055 15 a, 3 0v ,r ds(on) 100 m n-channel enhancement mode power mos.fet [


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